Suppression of the redox reaction between the IGZO surface and the reducing agent TMA using fluorine oxidizing agent treatment

We propose that the post-deposition oxidation of the IGZO surface is essential for improving the interface quality, with Al(2)O(3) prepared by atomic layer deposition (ALD) employing a common metal precursor trimethylaluminum (TMA). Here, the ALD-Al(2)O(3) process was conducted using H(2)O as an oxi...

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Detalles Bibliográficos
Autores principales: Jang, Yuseong, Lee, Jinkyu, Mok, Jinsung, Park, Junhyeong, Shin, Seung Yoon, Lee, Soo-Yeon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10641534/
https://www.ncbi.nlm.nih.gov/pubmed/37964900
http://dx.doi.org/10.1039/d3ra06768h

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10641534/
https://www.ncbi.nlm.nih.gov/pubmed/37964900
http://dx.doi.org/10.1039/d3ra06768h

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