Correlation between the density of defect states (DDS) and cross-linking of corner/edge sharing GeSe(4) tetrahedral structural units

We have estimated the DDS in the STSG [Se(78-x)Te(20)Sn(2)Ge(x) (x = 0, 2, 4, 6)] system by using the Correlated Barrier Hopping (CBH) model by performing A.C. conduction measurements in the frequency range (1 kHz–10 kHz) and temperature underneath the glass transition temperature (303–333) K. The d...

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Detalles Bibliográficos
Autores principales: Pal, Shiv Kumar, Dahshan, A., Mehta, Neeraj
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2023
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10643265/
https://www.ncbi.nlm.nih.gov/pubmed/38027941
http://dx.doi.org/10.1016/j.heliyon.2023.e21424
Descripción
Sumario:We have estimated the DDS in the STSG [Se(78-x)Te(20)Sn(2)Ge(x) (x = 0, 2, 4, 6)] system by using the Correlated Barrier Hopping (CBH) model by performing A.C. conduction measurements in the frequency range (1 kHz–10 kHz) and temperature underneath the glass transition temperature (303–333) K. The detailed analysis reveals that bi-polaron hopping is a leading conduction mechanism over single-polaron hopping. Further, there is a noticeable reduction in DDS with increasing concentration of Ge beyond the composition x = 2. A close inspection indicates that cross-linking of Se with Ge has an important role in controlling the DDS in terms of the corner/edge sharing configurations in the structural unit of GeSe(4) tetrahedral.

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