The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO(x)/W Bilayer-Structured Memory Device

This study discusses the potential application of ITO/ZnO/HfO(x)/W bilayer-structured memory devices in neuromorphic systems. These devices exhibit uniform resistive switching characteristics and demonstrate favorable endurance (>10(2)) and stable retention (>10(4) s). Notably, the formation a...

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Detalles Bibliográficos
Autores principales: Noh, Minseo, Ju, Dongyeol, Cho, Seongjae, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10648049/
https://www.ncbi.nlm.nih.gov/pubmed/37947701
http://dx.doi.org/10.3390/nano13212856

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10648049/
https://www.ncbi.nlm.nih.gov/pubmed/37947701
http://dx.doi.org/10.3390/nano13212856

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