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A 3.0 µm Pixels and 1.5 µm Pixels Combined Complementary Metal-Oxide Semiconductor Image Sensor for High Dynamic Range Vision beyond 106 dB †

We propose a new concept image sensor suitable for viewing and sensing applications. This is a report of a CMOS image sensor with a pixel architecture consisting of a 1.5 μm pixel with four-floating-diffusions-shared pixel structures and a 3.0 μm pixel with an in-pixel capacitor. These pixels are fo...

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Detalles Bibliográficos
Autores principales: Iida, Satoko, Kawamata, Daisuke, Sakano, Yorito, Yamanaka, Takaya, Nabeyoshi, Shohei, Matsuura, Tomohiro, Toshida, Masahiro, Baba, Masahiro, Fujimori, Nobuhiko, Basavalingappa, Adarsh, Han, Sungin, Katayama, Hidetoshi, Azami, Junichiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10648763/
https://www.ncbi.nlm.nih.gov/pubmed/37960697
http://dx.doi.org/10.3390/s23218998

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