Polarization enhanced photoresponse of InSe via 2D ferroelectric CuCrP(2)S(6)

Two-dimensional CuCrP(2)S(6) possesses significant potential for low-power non-volatile devices owing to its multiferroic properties. Nonetheless, comprehensive investigations regarding the modulation of CuCrP(2)S(6) polarization for enhancing semiconductor photodetection capabilities and its potential applications in ferroelectric non-volatile devices are still relatively scarce. In this study, we present a novel, non-volatile, tunable photodetector engineered through the integration of a ferroelectric heterostructure comprising CuCrP(2)S(6) and InSe. Our findings reveal that distinct ferroelectric polarization states of CuCrP(2)S(6) exert varying modulation effects on the InSe photodetection performance. Notably, optimized results give a responsivity of 1839 A W(−1) and a detectivity of 1.9 × 10(12) Jones at a 300 nm wavelength, featuring a substantial 20.7-fold difference in responsivity between the two polarization states. This investigation underscores the immense potential of CuCrP(2)S(6) in the development of non-volatile, multi-state optoelectronic devices.