Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability

[Image: see text] Memtransistors that combine the properties of transistor and memristor hold significant promise for in-memory computing. While superior data storage capability is achieved in memtransistors through gate voltage-induced conductance modulation, the lateral device configuration would...

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Detalles Bibliográficos
Autores principales: Sivan, Maheswari, Leong, Jin Feng, Ghosh, Joydeep, Tang, Baoshan, Pan, Jieming, Zamburg, Evgeny, Thean, Aaron Voon-Yew
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10653274/
https://www.ncbi.nlm.nih.gov/pubmed/36103401
http://dx.doi.org/10.1021/acsnano.2c04504

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10653274/
https://www.ncbi.nlm.nih.gov/pubmed/36103401
http://dx.doi.org/10.1021/acsnano.2c04504

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