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Resistive switching transparent SnO(2) thin film sensitive to light and humidity

Designing and manufacturing memristor devices with simple and less complicated methods is highly promising for their future development. Here, an Ag/SnO(2)/FTO(F-SnO(2)) structure is used through the deposition of the SnO(2) layer attained by its sol via the air-brush method on an FTO substrate. Thi...

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Detalles Bibliográficos
Autores principales:	Kalateh, Asiyeh, Jalali, Ali, Kamali Ashtiani, Mohammad Javad, Mohammadimasoudi, Mohammad, Bastami, Hajieh, Mohseni, Majid
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10654523/ https://www.ncbi.nlm.nih.gov/pubmed/37973907 http://dx.doi.org/10.1038/s41598-023-45790-0

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