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Unraveling Spatiotemporal Transient Dynamics at the Nanoscale via Wavelet Transform-Based Kelvin Probe Force Microscopy

[Image: see text] Mechanistic probing of surface potential changes arising from dynamic charge transport is the key to understanding and engineering increasingly complex nanoscale materials and devices. Spatiotemporal averaging in conventional heterodyne detection-based Kelvin probe force microscopy...

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Detalles Bibliográficos
Autores principales: Biglarbeigi, Pardis, Morelli, Alessio, Pauly, Serene, Yu, Zidong, Jiang, Wenjun, Sharma, Surbhi, Finlay, Dewar, Kumar, Amit, Soin, Navneet, Payam, Amir Farokh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10655243/
https://www.ncbi.nlm.nih.gov/pubmed/37877266
http://dx.doi.org/10.1021/acsnano.3c06488
Descripción
Sumario:[Image: see text] Mechanistic probing of surface potential changes arising from dynamic charge transport is the key to understanding and engineering increasingly complex nanoscale materials and devices. Spatiotemporal averaging in conventional heterodyne detection-based Kelvin probe force microscopy (KPFM) inherently limits its time resolution, causing an irretrievable loss of transient response and higher-order harmonics. Addressing this, we report a wavelet transform (WT)-based methodology capable of quantifying the sub-ms charge dynamics and probing the elusive transient response. The feedback-free, open-loop wavelet transform KPFM (OL-WT-KPFM) technique harnesses the WT’s ability to simultaneously extract spatial and temporal information from the photodetector signal to provide a dynamic mapping of surface potential, capacitance gradient, and dielectric constant at a temporal resolution 3 orders of magnitude higher than the lock-in time constant. We further demonstrate the method’s applicability to explore the surface-photovoltage-induced sub-ms hole-diffusion transient in bismuth oxyiodide semiconductor. The OL-WT-KPFM concept is readily applicable to commercial systems and can provide the underlying basis for the real-time analysis of transient electronic and electrochemical properties.