Engineering electrode interfaces for telecom-band photodetection in MoS(2)/Au heterostructures via sub-band light absorption

Transition metal dichalcogenide (TMD) layered semiconductors possess immense potential in the design of photonic, electronic, optoelectronic, and sensor devices. However, the sub-bandgap light absorption of TMD in the range from near-infrared (NIR) to short-wavelength infrared (SWIR) is insufficient...

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Detalles Bibliográficos
Autores principales: Hong, Chengyun, Oh, Saejin, Dat, Vu Khac, Pak, Sangyeon, Cha, SeungNam, Ko, Kyung-Hun, Choi, Gyung-Min, Low, Tony, Oh, Sang-Hyun, Kim, Ji-Hee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10667329/
https://www.ncbi.nlm.nih.gov/pubmed/37996413
http://dx.doi.org/10.1038/s41377-023-01308-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10667329/
https://www.ncbi.nlm.nih.gov/pubmed/37996413
http://dx.doi.org/10.1038/s41377-023-01308-x

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