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Tailoring the Structure and Properties of Epitaxial Europium Tellurides on Si(100) through Substrate Temperature Control

In this study, we improved the growth procedure of EuTe and realized the epitaxial growth of EuTe(4). Our research demonstrated a selective growth of both EuTe and EuTe(4) on Si(100) substrates using the molecular beam epitaxy (MBE) technique and reveals that the substrate temperature plays a crucia...

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Detalles Bibliográficos
Autores principales:	Yu, Fan, Qiu, Xiaodong, Zhou, Jinming, Huang, Lin, Yang, Bin, Liu, Junming, Wu, Di, Wang, Gan, Zhang, Yi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10672566/ https://www.ncbi.nlm.nih.gov/pubmed/38005023 http://dx.doi.org/10.3390/ma16227093

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