Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs

In this paper, the reliability of InP/InGaAs DHBTs under high reverse base–collector bias stress is analyzed by experiments and simulation. The DC characteristics and S parameters of the devices under different stress times were measured, and the key parameters with high field stress were also extra...

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Detalles Bibliográficos
Autores principales: Yan, Silu, Lu, Hongliang, Cheng, Lin, Qiao, Jiantao, Cheng, Wei, Zhang, Yuming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10672766/
https://www.ncbi.nlm.nih.gov/pubmed/38004929
http://dx.doi.org/10.3390/mi14112073

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10672766/
https://www.ncbi.nlm.nih.gov/pubmed/38004929
http://dx.doi.org/10.3390/mi14112073

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