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Electric-Force Conversion Performance of Si-Based LiNbO(3) Devices Based on Four Cantilever Beams
In micron or nano smart sensing systems, piezoelectric cantilever beams are distributed as major components in microsensors, actuators, and energy harvesters. This paper investigates the performance of four cantilever beam devices with “electric-force” conversion based on the inverse piezoelectric e...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10672825/ https://www.ncbi.nlm.nih.gov/pubmed/38004845 http://dx.doi.org/10.3390/mi14111988 |
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author | Zhang, Huiyi Qiao, Xiaojun Wei, Huifen Li, Xiaohuang Wu, Xiaohui Yu, Nanxin Lu, Hao Guo, Tao Chou, Xiujian Geng, Wenping |
author_facet | Zhang, Huiyi Qiao, Xiaojun Wei, Huifen Li, Xiaohuang Wu, Xiaohui Yu, Nanxin Lu, Hao Guo, Tao Chou, Xiujian Geng, Wenping |
author_sort | Zhang, Huiyi |
collection | PubMed |
description | In micron or nano smart sensing systems, piezoelectric cantilever beams are distributed as major components in microsensors, actuators, and energy harvesters. This paper investigates the performance of four cantilever beam devices with “electric-force” conversion based on the inverse piezoelectric effect of lithium niobate (LiNbO(3), LN) single-crystal materials. A new compact piezoelectric smart device model is proposed, designed as a single mass block connected by four beams, where devices exhibit smaller lateral errors (0.39–0.41%). The relationship between the displacement characteristics of cantilever beams and driving voltage was researched by applying excitation signals. The results show that the device has the maximum displacement at a first-order intrinsic frequency (f(osc) = 11.338 kHz), while the displacement shows a good linear relationship (R(2) = 0.998) with driving voltage. The square wave signals of the same amplitude have greater “electrical-force” conversion efficiency. The output displacement can reach 12 nm, which is much higher than the output displacement with sinusoidal excitation. In addition, the relative displacement deviation of devices can be maintained within ±1% under multiple cycles of electrical signal loading. The small size, high reliability, and ultra-stability of Si–LN ferroelectric single-crystal cantilever beam devices with lower vibration amplitudes are promising for nanopositioning techniques in microscopy, diagnostics, and high-precision manufacturing applications. |
format | Online Article Text |
id | pubmed-10672825 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-106728252023-10-27 Electric-Force Conversion Performance of Si-Based LiNbO(3) Devices Based on Four Cantilever Beams Zhang, Huiyi Qiao, Xiaojun Wei, Huifen Li, Xiaohuang Wu, Xiaohui Yu, Nanxin Lu, Hao Guo, Tao Chou, Xiujian Geng, Wenping Micromachines (Basel) Article In micron or nano smart sensing systems, piezoelectric cantilever beams are distributed as major components in microsensors, actuators, and energy harvesters. This paper investigates the performance of four cantilever beam devices with “electric-force” conversion based on the inverse piezoelectric effect of lithium niobate (LiNbO(3), LN) single-crystal materials. A new compact piezoelectric smart device model is proposed, designed as a single mass block connected by four beams, where devices exhibit smaller lateral errors (0.39–0.41%). The relationship between the displacement characteristics of cantilever beams and driving voltage was researched by applying excitation signals. The results show that the device has the maximum displacement at a first-order intrinsic frequency (f(osc) = 11.338 kHz), while the displacement shows a good linear relationship (R(2) = 0.998) with driving voltage. The square wave signals of the same amplitude have greater “electrical-force” conversion efficiency. The output displacement can reach 12 nm, which is much higher than the output displacement with sinusoidal excitation. In addition, the relative displacement deviation of devices can be maintained within ±1% under multiple cycles of electrical signal loading. The small size, high reliability, and ultra-stability of Si–LN ferroelectric single-crystal cantilever beam devices with lower vibration amplitudes are promising for nanopositioning techniques in microscopy, diagnostics, and high-precision manufacturing applications. MDPI 2023-10-27 /pmc/articles/PMC10672825/ /pubmed/38004845 http://dx.doi.org/10.3390/mi14111988 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Zhang, Huiyi Qiao, Xiaojun Wei, Huifen Li, Xiaohuang Wu, Xiaohui Yu, Nanxin Lu, Hao Guo, Tao Chou, Xiujian Geng, Wenping Electric-Force Conversion Performance of Si-Based LiNbO(3) Devices Based on Four Cantilever Beams |
title | Electric-Force Conversion Performance of Si-Based LiNbO(3) Devices Based on Four Cantilever Beams |
title_full | Electric-Force Conversion Performance of Si-Based LiNbO(3) Devices Based on Four Cantilever Beams |
title_fullStr | Electric-Force Conversion Performance of Si-Based LiNbO(3) Devices Based on Four Cantilever Beams |
title_full_unstemmed | Electric-Force Conversion Performance of Si-Based LiNbO(3) Devices Based on Four Cantilever Beams |
title_short | Electric-Force Conversion Performance of Si-Based LiNbO(3) Devices Based on Four Cantilever Beams |
title_sort | electric-force conversion performance of si-based linbo(3) devices based on four cantilever beams |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10672825/ https://www.ncbi.nlm.nih.gov/pubmed/38004845 http://dx.doi.org/10.3390/mi14111988 |
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