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Influence of NF(3) Plasma-Treated HfO(2) Gate Insulator Surface on Tin Oxide Thin-Film Transistors

We studied the impact of NF(3) plasma treatment on the HfO(2) gate insulator of amorphous tin oxide (a-SnO(x)) thin-film transistors (TFTs). The plasma treatment was for 0, 10, or 30 s. The HfO(2) insulator demonstrated a slightly higher breakdown voltage, whereas the capacitance value remained almo...

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Detalles Bibliográficos
Autores principales:	Avis, Christophe, Jang, Jin
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673004/ https://www.ncbi.nlm.nih.gov/pubmed/38005100 http://dx.doi.org/10.3390/ma16227172

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