Ferroelectric Resistance Switching in Epitaxial BiFeO(3)/La(0.7)Sr(0.3)MnO(3) Heterostructures

BiFeO(3)/La(0.7)Sr(0.3)MnO(3) (BFO/LSMO) epitaxial heterostructures were successfully synthesized by pulsed laser deposition on (001)-oriented SrTiO(3) single-crystal substrates with Au top electrodes. Stable bipolar resistive switching characteristics regulated by ferroelectric polarization reversa...

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Detalles Bibliográficos
Autores principales: Qi, Hongyan, Wu, Weixin, Chen, Xinqi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673057/
https://www.ncbi.nlm.nih.gov/pubmed/38005127
http://dx.doi.org/10.3390/ma16227198
Descripción
Sumario:BiFeO(3)/La(0.7)Sr(0.3)MnO(3) (BFO/LSMO) epitaxial heterostructures were successfully synthesized by pulsed laser deposition on (001)-oriented SrTiO(3) single-crystal substrates with Au top electrodes. Stable bipolar resistive switching characteristics regulated by ferroelectric polarization reversal was observed in the Au/BFO/LSMO heterostructures. The conduction mechanism was revealed to follow the Schottky emission model, and the Schottky barriers in high-resistance and low-resistance states were estimated based on temperature-dependent current–voltage curves. Further, the observed memristive behavior was interpreted via the modulation effect on the depletion region width and the Schottky barrier height caused by ferroelectric polarization reversal, combining with the oxygen vacancies migration near the BFO/LSMO interface.

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