Cargando…
Design of Power Amplifiers for BDS-3 Terminal Based on InGaP/GaAs HBT MMIC and LGA Technology
With the development and popularization of the Beidou-3 navigation satellite system (BDS-3), to ensure its unique short message function, it is necessary to integrate a radio frequency (RF) transmitting circuit with high performance in the BDS-3 terminal. As the key device in an RF transmitting circ...
Autores principales: | Li, Zhenbing, Huang, Junjie, Zhang, Jinrong, Jia, Shilin, Sun, Haoyang, Li, Gang, Wen, Guangjun |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673261/ https://www.ncbi.nlm.nih.gov/pubmed/38004852 http://dx.doi.org/10.3390/mi14111995 |
Ejemplares similares
-
Effect of Alpha-Particle Irradiation on InGaP/GaAs/Ge Triple-Junction Solar Cells
por: Xu, Jing, et al.
Publicado: (2018) -
Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA
por: Lin, Qian, et al.
Publicado: (2022) -
Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods
por: Frigeri, Cesare, et al.
Publicado: (2011) -
Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate
por: Mols, Yves, et al.
Publicado: (2021) -
Efficiency improvement of InGaP/GaAs/Ge solar cells by hydrothermal-deposited ZnO nanotube structure
por: Chung, Chen-Chen, et al.
Publicado: (2014)