Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing †

This paper presents the complete design, fabrication, and characterization of a shallow-mesa photodiode for short-wave infra-red (SWIR) sensing. We characterized and demonstrated photodiodes collecting 1.55 μm photons with a pixel pitch as small as 3 μm. For a 5 μm pixel pitch photodiode, we measure...

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Detalles Bibliográficos
Autores principales: Tillement, Jules, Cervera, Cyril, Baylet, Jacques, Jany, Christophe, Nardelli, François, Di Rito, Thomas, Georges, Sylvain, Mugny, Gabriel, Saxod, Olivier, Gravrand, Olivier, Baron, Thierry, Roy, François, Boeuf, Frédéric
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10674491/
https://www.ncbi.nlm.nih.gov/pubmed/38005607
http://dx.doi.org/10.3390/s23229219

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