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Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory

Facing the era of information explosion and the advent of artificial intelligence, there is a growing demand for information technologies with huge storage capacity and efficient computer processing. However, traditional silicon-based storage and computing technology will reach their limits and cann...

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Autores principales: Li, Bixin, Zhang, Shiyang, Xu, Lan, Su, Qiong, Du, Bin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10675020/
https://www.ncbi.nlm.nih.gov/pubmed/38006098
http://dx.doi.org/10.3390/polym15224374
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author Li, Bixin
Zhang, Shiyang
Xu, Lan
Su, Qiong
Du, Bin
author_facet Li, Bixin
Zhang, Shiyang
Xu, Lan
Su, Qiong
Du, Bin
author_sort Li, Bixin
collection PubMed
description Facing the era of information explosion and the advent of artificial intelligence, there is a growing demand for information technologies with huge storage capacity and efficient computer processing. However, traditional silicon-based storage and computing technology will reach their limits and cannot meet the post-Moore information storage requirements of ultrasmall size, ultrahigh density, flexibility, biocompatibility, and recyclability. As a response to these concerns, polymer-based resistive memory materials have emerged as promising candidates for next-generation information storage and neuromorphic computing applications, with the advantages of easy molecular design, volatile and non-volatile storage, flexibility, and facile fabrication. Herein, we first summarize the memory device structures, memory effects, and memory mechanisms of polymers. Then, the recent advances in polymer resistive switching materials, including single-component polymers, polymer mixtures, 2D covalent polymers, and biomacromolecules for resistive memory devices, are highlighted. Finally, the challenges and future prospects of polymer memory materials and devices are discussed. Advances in polymer-based memristors will open new avenues in the design and integration of high-performance switching devices and facilitate their application in future information technology.
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spelling pubmed-106750202023-11-10 Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory Li, Bixin Zhang, Shiyang Xu, Lan Su, Qiong Du, Bin Polymers (Basel) Review Facing the era of information explosion and the advent of artificial intelligence, there is a growing demand for information technologies with huge storage capacity and efficient computer processing. However, traditional silicon-based storage and computing technology will reach their limits and cannot meet the post-Moore information storage requirements of ultrasmall size, ultrahigh density, flexibility, biocompatibility, and recyclability. As a response to these concerns, polymer-based resistive memory materials have emerged as promising candidates for next-generation information storage and neuromorphic computing applications, with the advantages of easy molecular design, volatile and non-volatile storage, flexibility, and facile fabrication. Herein, we first summarize the memory device structures, memory effects, and memory mechanisms of polymers. Then, the recent advances in polymer resistive switching materials, including single-component polymers, polymer mixtures, 2D covalent polymers, and biomacromolecules for resistive memory devices, are highlighted. Finally, the challenges and future prospects of polymer memory materials and devices are discussed. Advances in polymer-based memristors will open new avenues in the design and integration of high-performance switching devices and facilitate their application in future information technology. MDPI 2023-11-10 /pmc/articles/PMC10675020/ /pubmed/38006098 http://dx.doi.org/10.3390/polym15224374 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Li, Bixin
Zhang, Shiyang
Xu, Lan
Su, Qiong
Du, Bin
Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory
title Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory
title_full Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory
title_fullStr Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory
title_full_unstemmed Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory
title_short Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory
title_sort emerging robust polymer materials for high-performance two-terminal resistive switching memory
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10675020/
https://www.ncbi.nlm.nih.gov/pubmed/38006098
http://dx.doi.org/10.3390/polym15224374
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