Manufacturing of quantum-tunneling MIM nanodiodes via rapid atmospheric CVD in terahertz band

Quantum-tunneling metal–insulator-metal (MIM) diodes have emerged as a significant area of study in the field of materials science and electronics. Our previous work demonstrated the successful fabrication of these diodes using atmospheric pressure chemical vapor deposition (AP-CVD), a scalable method that surpasses traditional vacuum-based methods and allows for the fabrication of high-quality Al(2)O(3) films with few pinholes. Here, we show that despite their extremely small size 0.002 µm(2), the MIM nanodiodes demonstrate low resistance at zero bias. Moreover, we have observed a significant enhancement in resistance by six orders of magnitude compared to our prior work, Additionally, we have achieved a high responsivity of 9 AW(−1), along with a theoretical terahertz cut-off frequency of 0.36 THz. Our approach provides an efficient alternative to cleanroom fabrication, opening up new opportunities for manufacturing terahertz-Band devices. The results of our study highlight the practicality and potential of our method in advancing nanoelectronics. This lays the foundation for the development of advanced quantum devices that operate at terahertz frequencies, with potential applications in telecommunications, medical imaging, and security systems.