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Molecular Beam Epitaxy Growth of Cadmium Telluride Structures on Hexagonal Boron Nitride

[Image: see text] We investigate the feasibility of the epitaxial growth of a three-dimensional semiconductor on a two-dimensional substrate. In particular, we report for the first time the molecular beam epitaxy growth of cadmium telluride (CdTe) quantum wells on hexagonal boron nitride (hBN). The...

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Detalles Bibliográficos
Autores principales: Szczerba, Adam Krzysztof, Kucharek, Julia, Pawłowski, Jan, Taniguchi, Takashi, Watanabe, Kenji, Pacuski, Wojciech
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10688111/
https://www.ncbi.nlm.nih.gov/pubmed/38046332
http://dx.doi.org/10.1021/acsomega.3c05699
Descripción
Sumario:[Image: see text] We investigate the feasibility of the epitaxial growth of a three-dimensional semiconductor on a two-dimensional substrate. In particular, we report for the first time the molecular beam epitaxy growth of cadmium telluride (CdTe) quantum wells on hexagonal boron nitride (hBN). The presence of the quantum wells is confirmed by photoluminescence measurements conducted at helium temperatures. Growth of the quantum wells on two-dimensional, almost perfectly flat hBN appears to be very different from growth on bulk substrates; in particular, it requires 70–100 °C lower temperatures.