Molecular Beam Epitaxy Growth of Cadmium Telluride Structures on Hexagonal Boron Nitride

[Image: see text] We investigate the feasibility of the epitaxial growth of a three-dimensional semiconductor on a two-dimensional substrate. In particular, we report for the first time the molecular beam epitaxy growth of cadmium telluride (CdTe) quantum wells on hexagonal boron nitride (hBN). The...

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Autores principales: Szczerba, Adam Krzysztof, Kucharek, Julia, Pawłowski, Jan, Taniguchi, Takashi, Watanabe, Kenji, Pacuski, Wojciech
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10688111/
https://www.ncbi.nlm.nih.gov/pubmed/38046332
http://dx.doi.org/10.1021/acsomega.3c05699
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author Szczerba, Adam Krzysztof
Kucharek, Julia
Pawłowski, Jan
Taniguchi, Takashi
Watanabe, Kenji
Pacuski, Wojciech
author_facet Szczerba, Adam Krzysztof
Kucharek, Julia
Pawłowski, Jan
Taniguchi, Takashi
Watanabe, Kenji
Pacuski, Wojciech
author_sort Szczerba, Adam Krzysztof
collection PubMed
description [Image: see text] We investigate the feasibility of the epitaxial growth of a three-dimensional semiconductor on a two-dimensional substrate. In particular, we report for the first time the molecular beam epitaxy growth of cadmium telluride (CdTe) quantum wells on hexagonal boron nitride (hBN). The presence of the quantum wells is confirmed by photoluminescence measurements conducted at helium temperatures. Growth of the quantum wells on two-dimensional, almost perfectly flat hBN appears to be very different from growth on bulk substrates; in particular, it requires 70–100 °C lower temperatures.
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spelling pubmed-106881112023-12-01 Molecular Beam Epitaxy Growth of Cadmium Telluride Structures on Hexagonal Boron Nitride Szczerba, Adam Krzysztof Kucharek, Julia Pawłowski, Jan Taniguchi, Takashi Watanabe, Kenji Pacuski, Wojciech ACS Omega [Image: see text] We investigate the feasibility of the epitaxial growth of a three-dimensional semiconductor on a two-dimensional substrate. In particular, we report for the first time the molecular beam epitaxy growth of cadmium telluride (CdTe) quantum wells on hexagonal boron nitride (hBN). The presence of the quantum wells is confirmed by photoluminescence measurements conducted at helium temperatures. Growth of the quantum wells on two-dimensional, almost perfectly flat hBN appears to be very different from growth on bulk substrates; in particular, it requires 70–100 °C lower temperatures. American Chemical Society 2023-11-14 /pmc/articles/PMC10688111/ /pubmed/38046332 http://dx.doi.org/10.1021/acsomega.3c05699 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Szczerba, Adam Krzysztof
Kucharek, Julia
Pawłowski, Jan
Taniguchi, Takashi
Watanabe, Kenji
Pacuski, Wojciech
Molecular Beam Epitaxy Growth of Cadmium Telluride Structures on Hexagonal Boron Nitride
title Molecular Beam Epitaxy Growth of Cadmium Telluride Structures on Hexagonal Boron Nitride
title_full Molecular Beam Epitaxy Growth of Cadmium Telluride Structures on Hexagonal Boron Nitride
title_fullStr Molecular Beam Epitaxy Growth of Cadmium Telluride Structures on Hexagonal Boron Nitride
title_full_unstemmed Molecular Beam Epitaxy Growth of Cadmium Telluride Structures on Hexagonal Boron Nitride
title_short Molecular Beam Epitaxy Growth of Cadmium Telluride Structures on Hexagonal Boron Nitride
title_sort molecular beam epitaxy growth of cadmium telluride structures on hexagonal boron nitride
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10688111/
https://www.ncbi.nlm.nih.gov/pubmed/38046332
http://dx.doi.org/10.1021/acsomega.3c05699
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