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Gate-tunable anomalous Hall effect in Bernal tetralayer graphene
Large spin-orbit coupling is often thought to be critical in realizing magnetic order-locked charge transport such as the anomalous Hall effect (AHE). Recently, artificial stacks of two-dimensional materials, e.g., magic-angle twisted bilayer graphene on hexagonal boron-nitride heterostructures and...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10692167/ https://www.ncbi.nlm.nih.gov/pubmed/38040749 http://dx.doi.org/10.1038/s41467-023-43796-w |
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author | Chen, Hao Arora, Arpit Song, Justin C. W. Loh, Kian Ping |
author_facet | Chen, Hao Arora, Arpit Song, Justin C. W. Loh, Kian Ping |
author_sort | Chen, Hao |
collection | PubMed |
description | Large spin-orbit coupling is often thought to be critical in realizing magnetic order-locked charge transport such as the anomalous Hall effect (AHE). Recently, artificial stacks of two-dimensional materials, e.g., magic-angle twisted bilayer graphene on hexagonal boron-nitride heterostructures and dual-gated rhombohedral trilayer graphene, have become platforms for realizing AHE without spin-orbit coupling. However, these stacking arrangements are not energetically favorable, impeding experiments and further device engineering. Here we report an anomalous Hall effect in Bernal-stacked tetralayer graphene devices (BTG), the most stable configuration of four-layer graphene. BTG AHE is switched on by a displacement field and is most pronounced at low carrier densities. The onset of AHE occurs in tandem with a full metal to a broken isospin transition indicating an orbital origin of the itinerant ferromagnetism. At lowest densities, BTG exhibits an unconventional hysteresis with step-like anomalous Hall plateaus. Persisting to several tens of kelvin, AHE in BTG demonstrates the ubiquity and robustness of magnetic order in readily available and stable multilayer Bernal graphene stacks—a new venue for intrinsic non-reciprocal responses. |
format | Online Article Text |
id | pubmed-10692167 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-106921672023-12-03 Gate-tunable anomalous Hall effect in Bernal tetralayer graphene Chen, Hao Arora, Arpit Song, Justin C. W. Loh, Kian Ping Nat Commun Article Large spin-orbit coupling is often thought to be critical in realizing magnetic order-locked charge transport such as the anomalous Hall effect (AHE). Recently, artificial stacks of two-dimensional materials, e.g., magic-angle twisted bilayer graphene on hexagonal boron-nitride heterostructures and dual-gated rhombohedral trilayer graphene, have become platforms for realizing AHE without spin-orbit coupling. However, these stacking arrangements are not energetically favorable, impeding experiments and further device engineering. Here we report an anomalous Hall effect in Bernal-stacked tetralayer graphene devices (BTG), the most stable configuration of four-layer graphene. BTG AHE is switched on by a displacement field and is most pronounced at low carrier densities. The onset of AHE occurs in tandem with a full metal to a broken isospin transition indicating an orbital origin of the itinerant ferromagnetism. At lowest densities, BTG exhibits an unconventional hysteresis with step-like anomalous Hall plateaus. Persisting to several tens of kelvin, AHE in BTG demonstrates the ubiquity and robustness of magnetic order in readily available and stable multilayer Bernal graphene stacks—a new venue for intrinsic non-reciprocal responses. Nature Publishing Group UK 2023-12-01 /pmc/articles/PMC10692167/ /pubmed/38040749 http://dx.doi.org/10.1038/s41467-023-43796-w Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Chen, Hao Arora, Arpit Song, Justin C. W. Loh, Kian Ping Gate-tunable anomalous Hall effect in Bernal tetralayer graphene |
title | Gate-tunable anomalous Hall effect in Bernal tetralayer graphene |
title_full | Gate-tunable anomalous Hall effect in Bernal tetralayer graphene |
title_fullStr | Gate-tunable anomalous Hall effect in Bernal tetralayer graphene |
title_full_unstemmed | Gate-tunable anomalous Hall effect in Bernal tetralayer graphene |
title_short | Gate-tunable anomalous Hall effect in Bernal tetralayer graphene |
title_sort | gate-tunable anomalous hall effect in bernal tetralayer graphene |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10692167/ https://www.ncbi.nlm.nih.gov/pubmed/38040749 http://dx.doi.org/10.1038/s41467-023-43796-w |
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