One-pot synthesis of Ag–In–Ga–S nanocrystals embedded in a Ga(2)O(3) matrix and enhancement of band-edge emission by Na(+) doping

I–III–VI-based semiconductor quantum dots (QDs) have been intensively explored because of their unique controllable optoelectronic properties. Here we report one-pot synthesis of Na-doped Ag–In–Ga–S (AIGS) QDs incorporated in a Ga(2)O(3) matrix. The obtained QDs showed a sharp band-edge photolumines...

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Detalles Bibliográficos
Autores principales: Tozawa, Makoto, Miyamae, Chie, Akiyoshi, Kazutaka, Kameyama, Tatsuya, Yamamoto, Takahisa, Motomura, Genichi, Fujisaki, Yoshihide, Uematsu, Taro, Kuwabata, Susumu, Torimoto, Tsukasa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10696949/
http://dx.doi.org/10.1039/d3na00755c
Descripción
Sumario:I–III–VI-based semiconductor quantum dots (QDs) have been intensively explored because of their unique controllable optoelectronic properties. Here we report one-pot synthesis of Na-doped Ag–In–Ga–S (AIGS) QDs incorporated in a Ga(2)O(3) matrix. The obtained QDs showed a sharp band-edge photoluminescence peak at 557 nm without a broad-defect site emission. The PL quantum yield (QY) of such QDs was 58%, being much higher than that of AIGS QDs without Na(+) doping, 29%. The obtained Na-doped AIGS/Ga(2)O(3) composite particles were used as an emitting layer of green QD light-emitted diodes. A sharp electroluminescence (EL) peak was observed at 563 nm, being similar to that in the PL spectrum of the QDs used. The external quantum efficiency of the device was 0.6%.

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