Cargando…
Rapid default transition of CD4 T cell effectors to functional memory cells
The majority of highly activated CD4 T cell effectors die after antigen clearance, but a small number revert to a resting state, becoming memory cells with unique functional attributes. It is currently unclear when after antigen clearance effectors return to rest and acquire important memory propert...
Autores principales: | , , , , , |
---|---|
Formato: | Texto |
Lenguaje: | English |
Publicado: |
The Rockefeller University Press
2007
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2118696/ https://www.ncbi.nlm.nih.gov/pubmed/17724126 http://dx.doi.org/10.1084/jem.20070041 |
_version_ | 1782141086512185344 |
---|---|
author | McKinstry, K. Kai Golech, Susanne Lee, Won-Ha Huston, Gail Weng, Nan-Ping Swain, Susan L. |
author_facet | McKinstry, K. Kai Golech, Susanne Lee, Won-Ha Huston, Gail Weng, Nan-Ping Swain, Susan L. |
author_sort | McKinstry, K. Kai |
collection | PubMed |
description | The majority of highly activated CD4 T cell effectors die after antigen clearance, but a small number revert to a resting state, becoming memory cells with unique functional attributes. It is currently unclear when after antigen clearance effectors return to rest and acquire important memory properties. We follow well-defined cohorts of CD4 T cells through the effector-to-memory transition by analyzing phenotype, important functional properties, and gene expression profiles. We find that the transition from effector to memory is rapid in that effectors rested for only 3 d closely resemble canonical memory cells rested for 60 d or longer in the absence of antigen. This is true for both Th1 and Th2 lineages, and occurs whether CD4 T cell effectors rest in vivo or in vitro, suggesting a default pathway. We find that the effector–memory transition at the level of gene expression occurs in two stages: a rapid loss of expression of a myriad of effector-associated genes, and a more gradual gain of expression of a cohort of genes uniquely associated with memory cells rested for extended periods. |
format | Text |
id | pubmed-2118696 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2007 |
publisher | The Rockefeller University Press |
record_format | MEDLINE/PubMed |
spelling | pubmed-21186962008-03-03 Rapid default transition of CD4 T cell effectors to functional memory cells McKinstry, K. Kai Golech, Susanne Lee, Won-Ha Huston, Gail Weng, Nan-Ping Swain, Susan L. J Exp Med Articles The majority of highly activated CD4 T cell effectors die after antigen clearance, but a small number revert to a resting state, becoming memory cells with unique functional attributes. It is currently unclear when after antigen clearance effectors return to rest and acquire important memory properties. We follow well-defined cohorts of CD4 T cells through the effector-to-memory transition by analyzing phenotype, important functional properties, and gene expression profiles. We find that the transition from effector to memory is rapid in that effectors rested for only 3 d closely resemble canonical memory cells rested for 60 d or longer in the absence of antigen. This is true for both Th1 and Th2 lineages, and occurs whether CD4 T cell effectors rest in vivo or in vitro, suggesting a default pathway. We find that the effector–memory transition at the level of gene expression occurs in two stages: a rapid loss of expression of a myriad of effector-associated genes, and a more gradual gain of expression of a cohort of genes uniquely associated with memory cells rested for extended periods. The Rockefeller University Press 2007-09-03 /pmc/articles/PMC2118696/ /pubmed/17724126 http://dx.doi.org/10.1084/jem.20070041 Text en Copyright © 2007, The Rockefeller University Press This article is distributed under the terms of an Attribution–Noncommercial–Share Alike–No Mirror Sites license for the first six months after the publication date (see http://www.rupress.org/terms). After six months it is available under a Creative Commons License (Attribution–Noncommercial–Share Alike 4.0 Unported license, as described at http://creativecommons.org/licenses/by-nc-sa/4.0/). |
spellingShingle | Articles McKinstry, K. Kai Golech, Susanne Lee, Won-Ha Huston, Gail Weng, Nan-Ping Swain, Susan L. Rapid default transition of CD4 T cell effectors to functional memory cells |
title | Rapid default transition of CD4 T cell effectors to functional memory cells |
title_full | Rapid default transition of CD4 T cell effectors to functional memory cells |
title_fullStr | Rapid default transition of CD4 T cell effectors to functional memory cells |
title_full_unstemmed | Rapid default transition of CD4 T cell effectors to functional memory cells |
title_short | Rapid default transition of CD4 T cell effectors to functional memory cells |
title_sort | rapid default transition of cd4 t cell effectors to functional memory cells |
topic | Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2118696/ https://www.ncbi.nlm.nih.gov/pubmed/17724126 http://dx.doi.org/10.1084/jem.20070041 |
work_keys_str_mv | AT mckinstrykkai rapiddefaulttransitionofcd4tcelleffectorstofunctionalmemorycells AT golechsusanne rapiddefaulttransitionofcd4tcelleffectorstofunctionalmemorycells AT leewonha rapiddefaulttransitionofcd4tcelleffectorstofunctionalmemorycells AT hustongail rapiddefaulttransitionofcd4tcelleffectorstofunctionalmemorycells AT wengnanping rapiddefaulttransitionofcd4tcelleffectorstofunctionalmemorycells AT swainsusanl rapiddefaulttransitionofcd4tcelleffectorstofunctionalmemorycells |