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Superhelical Destabilization in Regulatory Regions of Stress Response Genes

Stress-induced DNA duplex destabilization (SIDD) analysis exploits the known structural and energetic properties of DNA to predict sites that are susceptible to strand separation under negative superhelical stress. When this approach was used to calculate the SIDD profile of the entire Escherichia c...

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Autores principales: Wang, Huiquan, Benham, Craig J
Formato: Texto
Lenguaje:English
Publicado: Public Library of Science 2008
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2211533/
https://www.ncbi.nlm.nih.gov/pubmed/18208321
http://dx.doi.org/10.1371/journal.pcbi.0040017
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author Wang, Huiquan
Benham, Craig J
author_facet Wang, Huiquan
Benham, Craig J
author_sort Wang, Huiquan
collection PubMed
description Stress-induced DNA duplex destabilization (SIDD) analysis exploits the known structural and energetic properties of DNA to predict sites that are susceptible to strand separation under negative superhelical stress. When this approach was used to calculate the SIDD profile of the entire Escherichia coli K12 genome, it was found that strongly destabilized sites occur preferentially in intergenic regions that are either known or inferred to contain promoters, but rarely occur in coding regions. Here, we investigate whether the genes grouped in different functional categories have characteristic SIDD properties in their upstream flanks. We report that strong SIDD sites in the E. coli K12 genome are statistically significantly overrepresented in the upstream regions of genes encoding transcriptional regulators. In particular, the upstream regions of genes that directly respond to physiological and environmental stimuli are more destabilized than are those regions of genes that are not involved in these responses. Moreover, if a pathway is controlled by a transcriptional regulator whose gene has a destabilized 5′ flank, then the genes (operons) in that pathway also usually contain strongly destabilized SIDD sites in their 5′ flanks. We observe this statistically significant association of SIDD sites with upstream regions of genes functioning in transcription in 38 of 43 genomes of free-living bacteria, but in only four of 18 genomes of endosymbionts or obligate parasitic bacteria. These results suggest that strong SIDD sites 5′ to participating genes may be involved in transcriptional responses to environmental changes, which are known to transiently alter superhelicity. We propose that these SIDD sites are active and necessary participants in superhelically mediated regulatory mechanisms governing changes in the global pattern of gene expression in prokaryotes in response to physiological or environmental changes.
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spelling pubmed-22115332008-01-23 Superhelical Destabilization in Regulatory Regions of Stress Response Genes Wang, Huiquan Benham, Craig J PLoS Comput Biol Research Article Stress-induced DNA duplex destabilization (SIDD) analysis exploits the known structural and energetic properties of DNA to predict sites that are susceptible to strand separation under negative superhelical stress. When this approach was used to calculate the SIDD profile of the entire Escherichia coli K12 genome, it was found that strongly destabilized sites occur preferentially in intergenic regions that are either known or inferred to contain promoters, but rarely occur in coding regions. Here, we investigate whether the genes grouped in different functional categories have characteristic SIDD properties in their upstream flanks. We report that strong SIDD sites in the E. coli K12 genome are statistically significantly overrepresented in the upstream regions of genes encoding transcriptional regulators. In particular, the upstream regions of genes that directly respond to physiological and environmental stimuli are more destabilized than are those regions of genes that are not involved in these responses. Moreover, if a pathway is controlled by a transcriptional regulator whose gene has a destabilized 5′ flank, then the genes (operons) in that pathway also usually contain strongly destabilized SIDD sites in their 5′ flanks. We observe this statistically significant association of SIDD sites with upstream regions of genes functioning in transcription in 38 of 43 genomes of free-living bacteria, but in only four of 18 genomes of endosymbionts or obligate parasitic bacteria. These results suggest that strong SIDD sites 5′ to participating genes may be involved in transcriptional responses to environmental changes, which are known to transiently alter superhelicity. We propose that these SIDD sites are active and necessary participants in superhelically mediated regulatory mechanisms governing changes in the global pattern of gene expression in prokaryotes in response to physiological or environmental changes. Public Library of Science 2008-01 2008-01-18 /pmc/articles/PMC2211533/ /pubmed/18208321 http://dx.doi.org/10.1371/journal.pcbi.0040017 Text en © 2008 Wang and Benham. http://creativecommons.org/licenses/by/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are properly credited.
spellingShingle Research Article
Wang, Huiquan
Benham, Craig J
Superhelical Destabilization in Regulatory Regions of Stress Response Genes
title Superhelical Destabilization in Regulatory Regions of Stress Response Genes
title_full Superhelical Destabilization in Regulatory Regions of Stress Response Genes
title_fullStr Superhelical Destabilization in Regulatory Regions of Stress Response Genes
title_full_unstemmed Superhelical Destabilization in Regulatory Regions of Stress Response Genes
title_short Superhelical Destabilization in Regulatory Regions of Stress Response Genes
title_sort superhelical destabilization in regulatory regions of stress response genes
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2211533/
https://www.ncbi.nlm.nih.gov/pubmed/18208321
http://dx.doi.org/10.1371/journal.pcbi.0040017
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