Cargando…
Molecular Movement of the Voltage Sensor in a K Channel
The X-ray crystallographic structure of KvAP, a voltage-gated bacterial K channel, was recently published. However, the position and the molecular movement of the voltage sensor, S4, are still controversial. For example, in the crystallographic structure, S4 is located far away (>30 Å) from the p...
Autores principales: | Broomand, Amir, Männikkö, Roope, Larsson, H. Peter, Elinder, Fredrik |
---|---|
Formato: | Texto |
Lenguaje: | English |
Publicado: |
The Rockefeller University Press
2003
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2229587/ https://www.ncbi.nlm.nih.gov/pubmed/14610021 http://dx.doi.org/10.1085/jgp.200308927 |
Ejemplares similares
-
Hysteresis in the Voltage Dependence of HCN Channels: Conversion between Two Modes Affects Pacemaker Properties
por: Männikkö, Roope, et al.
Publicado: (2005) -
S4 Charges Move Close to Residues in the Pore Domain during Activation in a K Channel
por: Elinder, Fredrik, et al.
Publicado: (2001) -
Kinetic Relationship between the Voltage Sensor and the Activation Gate in spHCN Channels
por: Bruening-Wright, Andrew, et al.
Publicado: (2007) -
An electrostatic potassium channel opener targeting the final voltage sensor transition
por: Börjesson, Sara I., et al.
Publicado: (2011) -
Oxaliplatin neurotoxicity – no general ion channel surface-charge effect
por: Broomand, Amir, et al.
Publicado: (2009)