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Voltage Sensitivity and Gating Charge in Shaker and Shab Family Potassium Channels

The members of the voltage-dependent potassium channel family subserve a variety of functions and are expected to have voltage sensors with different sensitivities. The Shaker channel of Drosophila, which underlies a transient potassium current, has a high voltage sensitivity that is conferred by a...

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Autores principales: Islas, Leon D., Sigworth, Fred J.
Formato: Texto
Lenguaje:English
Publicado: The Rockefeller University Press 1999
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2230542/
https://www.ncbi.nlm.nih.gov/pubmed/10539976
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author Islas, Leon D.
Sigworth, Fred J.
author_facet Islas, Leon D.
Sigworth, Fred J.
author_sort Islas, Leon D.
collection PubMed
description The members of the voltage-dependent potassium channel family subserve a variety of functions and are expected to have voltage sensors with different sensitivities. The Shaker channel of Drosophila, which underlies a transient potassium current, has a high voltage sensitivity that is conferred by a large gating charge movement, ∼13 elementary charges. A Shaker subunit's primary voltage-sensing (S4) region has seven positively charged residues. The Shab channel and its homologue Kv2.1 both carry a delayed-rectifier current, and their subunits have only five positively charged residues in S4; they would be expected to have smaller gating-charge movements and voltage sensitivities. We have characterized the gating currents and single-channel behavior of Shab channels and have estimated the charge movement in Shaker, Shab, and their rat homologues Kv1.1 and Kv2.1 by measuring the voltage dependence of open probability at very negative voltages and comparing this with the charge–voltage relationships. We find that Shab has a relatively small gating charge, ∼7.5 e(o). Surprisingly, the corresponding mammalian delayed rectifier Kv2.1, which has the same complement of charged residues in the S2, S3, and S4 segments, has a gating charge of 12.5 e(o), essentially equal to that of Shaker and Kv1.1. Evidence for very strong coupling between charge movement and channel opening is seen in two channel types, with the probability of voltage-independent channel openings measured to be below 10(−9) in Shaker and below 4 × 10(−8) in Kv2.1.
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spelling pubmed-22305422008-04-22 Voltage Sensitivity and Gating Charge in Shaker and Shab Family Potassium Channels Islas, Leon D. Sigworth, Fred J. J Gen Physiol Original Article The members of the voltage-dependent potassium channel family subserve a variety of functions and are expected to have voltage sensors with different sensitivities. The Shaker channel of Drosophila, which underlies a transient potassium current, has a high voltage sensitivity that is conferred by a large gating charge movement, ∼13 elementary charges. A Shaker subunit's primary voltage-sensing (S4) region has seven positively charged residues. The Shab channel and its homologue Kv2.1 both carry a delayed-rectifier current, and their subunits have only five positively charged residues in S4; they would be expected to have smaller gating-charge movements and voltage sensitivities. We have characterized the gating currents and single-channel behavior of Shab channels and have estimated the charge movement in Shaker, Shab, and their rat homologues Kv1.1 and Kv2.1 by measuring the voltage dependence of open probability at very negative voltages and comparing this with the charge–voltage relationships. We find that Shab has a relatively small gating charge, ∼7.5 e(o). Surprisingly, the corresponding mammalian delayed rectifier Kv2.1, which has the same complement of charged residues in the S2, S3, and S4 segments, has a gating charge of 12.5 e(o), essentially equal to that of Shaker and Kv1.1. Evidence for very strong coupling between charge movement and channel opening is seen in two channel types, with the probability of voltage-independent channel openings measured to be below 10(−9) in Shaker and below 4 × 10(−8) in Kv2.1. The Rockefeller University Press 1999-11-01 /pmc/articles/PMC2230542/ /pubmed/10539976 Text en © 1999 The Rockefeller University Press This article is distributed under the terms of an Attribution–Noncommercial–Share Alike–No Mirror Sites license for the first six months after the publication date (see http://www.rupress.org/terms). After six months it is available under a Creative Commons License (Attribution–Noncommercial–Share Alike 4.0 Unported license, as described at http://creativecommons.org/licenses/by-nc-sa/4.0/).
spellingShingle Original Article
Islas, Leon D.
Sigworth, Fred J.
Voltage Sensitivity and Gating Charge in Shaker and Shab Family Potassium Channels
title Voltage Sensitivity and Gating Charge in Shaker and Shab Family Potassium Channels
title_full Voltage Sensitivity and Gating Charge in Shaker and Shab Family Potassium Channels
title_fullStr Voltage Sensitivity and Gating Charge in Shaker and Shab Family Potassium Channels
title_full_unstemmed Voltage Sensitivity and Gating Charge in Shaker and Shab Family Potassium Channels
title_short Voltage Sensitivity and Gating Charge in Shaker and Shab Family Potassium Channels
title_sort voltage sensitivity and gating charge in shaker and shab family potassium channels
topic Original Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2230542/
https://www.ncbi.nlm.nih.gov/pubmed/10539976
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