Self Assembly of Nano Metric Metallic Particles for Realization of Photonic and Electronic Nano Transistors

In this paper, we present the self assembly procedure as well as experimental results of a novel method for constructing well defined arrangements of self assembly metallic nano particles into sophisticated nano structures. The self assembly concept is based on focused ion beam (FIB) technology, whe...

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Autores principales: Shahmoon, Asaf, Limon, Ofer, Girshevitz, Olga, Zalevsky, Zeev
Formato: Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2010
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2885105/
https://www.ncbi.nlm.nih.gov/pubmed/20559513
http://dx.doi.org/10.3390/ijms11052242
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author Shahmoon, Asaf
Limon, Ofer
Girshevitz, Olga
Zalevsky, Zeev
author_facet Shahmoon, Asaf
Limon, Ofer
Girshevitz, Olga
Zalevsky, Zeev
author_sort Shahmoon, Asaf
collection PubMed
description In this paper, we present the self assembly procedure as well as experimental results of a novel method for constructing well defined arrangements of self assembly metallic nano particles into sophisticated nano structures. The self assembly concept is based on focused ion beam (FIB) technology, where metallic nano particles are self assembled due to implantation of positive gallium ions into the insulating material (e.g., silica as in silicon on insulator wafers) that acts as intermediary layer between the substrate and the negatively charge metallic nanoparticles.
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spelling pubmed-28851052010-06-17 Self Assembly of Nano Metric Metallic Particles for Realization of Photonic and Electronic Nano Transistors Shahmoon, Asaf Limon, Ofer Girshevitz, Olga Zalevsky, Zeev Int J Mol Sci Article In this paper, we present the self assembly procedure as well as experimental results of a novel method for constructing well defined arrangements of self assembly metallic nano particles into sophisticated nano structures. The self assembly concept is based on focused ion beam (FIB) technology, where metallic nano particles are self assembled due to implantation of positive gallium ions into the insulating material (e.g., silica as in silicon on insulator wafers) that acts as intermediary layer between the substrate and the negatively charge metallic nanoparticles. Molecular Diversity Preservation International (MDPI) 2010-05-25 /pmc/articles/PMC2885105/ /pubmed/20559513 http://dx.doi.org/10.3390/ijms11052242 Text en © 2010 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland. http://creativecommons.org/licenses/by/3.0 This article is an open-access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Shahmoon, Asaf
Limon, Ofer
Girshevitz, Olga
Zalevsky, Zeev
Self Assembly of Nano Metric Metallic Particles for Realization of Photonic and Electronic Nano Transistors
title Self Assembly of Nano Metric Metallic Particles for Realization of Photonic and Electronic Nano Transistors
title_full Self Assembly of Nano Metric Metallic Particles for Realization of Photonic and Electronic Nano Transistors
title_fullStr Self Assembly of Nano Metric Metallic Particles for Realization of Photonic and Electronic Nano Transistors
title_full_unstemmed Self Assembly of Nano Metric Metallic Particles for Realization of Photonic and Electronic Nano Transistors
title_short Self Assembly of Nano Metric Metallic Particles for Realization of Photonic and Electronic Nano Transistors
title_sort self assembly of nano metric metallic particles for realization of photonic and electronic nano transistors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2885105/
https://www.ncbi.nlm.nih.gov/pubmed/20559513
http://dx.doi.org/10.3390/ijms11052242
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AT girshevitzolga selfassemblyofnanometricmetallicparticlesforrealizationofphotonicandelectronicnanotransistors
AT zalevskyzeev selfassemblyofnanometricmetallicparticlesforrealizationofphotonicandelectronicnanotransistors

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