Cargando…
Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique
Self-assembled InAs quantum dots (QDs) were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InA...
Autores principales: | Dhawan, Tanuj, Tyagi, Renu, Bag, RajeshKumar, Singh, Mahavir, Mohan, Premila, Haldar, T, Murlidharan, R, Tandon, RP |
---|---|
Formato: | Texto |
Lenguaje: | English |
Publicado: |
Springer
2009
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893438/ https://www.ncbi.nlm.nih.gov/pubmed/20651909 http://dx.doi.org/10.1007/s11671-009-9439-y |
Ejemplares similares
-
InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition
por: Li, Senlin, et al.
Publicado: (2013) -
Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition
por: Ji, Xianghai, et al.
Publicado: (2017) -
Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
por: Golovynskyi, Sergii, et al.
Publicado: (2017) -
Spin effects in InAs self-assembled quantum dots
por: dos Santos, Ednilson C, et al.
Publicado: (2011) -
Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As(x)Sb(1-x )interfaces
por: Li, Li-Gong, et al.
Publicado: (2012)