Cargando…

Erratum to: Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well

Detalles Bibliográficos
Autores principales:	Wang, Jun, Lü, Yan-Wu, Liu, Xiang-Lin, Yang, Shao-Yan, Zhu, Qin-Sheng, Wang, Zhan-Guo
Formato:	Texto
Lenguaje:	English
Publicado:	Springer 2009
Materias:	Erratum
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893750/ https://www.ncbi.nlm.nih.gov/pubmed/20651921 http://dx.doi.org/10.1007/s11671-009-9437-0

Ejemplares similares

Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well
por: Wang, Jun, et al.
Publicado: (2009)

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
por: Chang, Tzu-Hsuan, et al.
Publicado: (2017)

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014)

Graphene/AlGaN/GaN RF Switch
por: Yashchyshyn, Yevhen, et al.
Publicado: (2021)

AlGaN/GaN FETs looms over GaAs technology
Publicado: (2003)

The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface
por: Podlipskas, Žydrūnas, et al.
Publicado: (2019)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023)

Formation of quantum dots in GaN/AlGaN FETs
por: Otsuka, Tomohiro, et al.
Publicado: (2020)

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
por: Arteev, Dmitri S., et al.
Publicado: (2022)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
por: Ma, Maodan, et al.
Publicado: (2022)

The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor
por: Zhang, Hanyuan, et al.
Publicado: (2020)

Optimization AlGaN/GaN HEMT with Field Plate Structures
por: Shi, Ningping, et al.
Publicado: (2022)

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
por: Zhao, Ying, et al.
Publicado: (2020)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
por: Wang, Haiping, et al.
Publicado: (2022)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
por: Weng, You-Chen, et al.
Publicado: (2023)

High Temperature AlGaN/GaN Membrane Based Pressure Sensors
por: Gajula, Durga, et al.
Publicado: (2018)

Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
por: Fan, Feng-Hsu, et al.
Publicado: (2017)

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
por: Dub, Maksym, et al.
Publicado: (2020)

A Novel Bidirectional AlGaN/GaN ESD Protection Diode
por: Yao, Bin, et al.
Publicado: (2022)

Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT
por: Liu, Censong, et al.
Publicado: (2023)

A modelling study of hole transport in GaN/AlGaN superlattices
por: Bai, Mengxun, et al.
Publicado: (2023)

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
por: Jorudas, Justinas, et al.
Publicado: (2020)

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
por: Kim, Tae-Hyeon, et al.
Publicado: (2021)

Origins of the Schottky Barrier to a 2DHG in a Au/Ni/GaN/AlGaN/GaN Heterostructure
por: Do, Huy-Binh, et al.
Publicado: (2022)

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
por: Wojtasiak, Wojciech, et al.
Publicado: (2018)

Investigation of AlGaN/GaN HFET and VO(2) Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers
por: Bayram, Ferhat, et al.
Publicado: (2020)

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes
por: Hu, Hongpo, et al.
Publicado: (2017)

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
por: Wu, Tian-Li, et al.
Publicado: (2020)

Dynamic properties of excitons in ZnO/AlGaN/GaN hybrid nanostructures
por: Forsberg, Mathias, et al.
Publicado: (2015)

Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells
por: Rong, X., et al.
Publicado: (2015)

Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure
por: Pandit, Bhishma, et al.
Publicado: (2020)

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
por: Zhang, Haitao, et al.
Publicado: (2021)

Low-Power AlGaN/GaN Triangular Microcantilever for Air Flow Detection
por: Uppalapati, Balaadithya, et al.
Publicado: (2023)

Donor-Like Surface Traps on Two-Dimensional Electron Gas and Current Collapse of AlGaN/GaN HEMTs
por: Yu, Chen-hui, et al.
Publicado: (2013)

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps †
por: Song, Yu-Lin, et al.
Publicado: (2021)

Room Temperature Operation of UV Photocatalytic Functionalized AlGaN/GaN Heterostructure Hydrogen Sensor
por: Choi, June-Heang, et al.
Publicado: (2021)

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs
por: Liao, Wen-Chia, et al.
Publicado: (2014)

On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes
por: Che, Jiamang, et al.
Publicado: (2018)

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
por: Liu, Xiao-Yong, et al.
Publicado: (2015)

Nanoscale Effects on Heterojunction Electron Gases in GaN/AlGaN Core/Shell Nanowires
por: Wong, Bryan M., et al.
Publicado: (2011)

Cannot write session to /tmp/vufind_sessions/sess_675q42qd8bsh10o65tiugvt6d7