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Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells

The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. The Rashba effect near the interface between GaAs and GaAlAs is assumed to be a linear relation with the distance fro...

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Detalles Bibliográficos
Autores principales: Li, Shu-Shen, Xia, Jian-Bai
Formato: Texto
Lenguaje:English
Publicado: Springer 2008
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893855/
https://www.ncbi.nlm.nih.gov/pubmed/20596489
http://dx.doi.org/10.1007/s11671-008-9222-5
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author Li, Shu-Shen
Xia, Jian-Bai
author_facet Li, Shu-Shen
Xia, Jian-Bai
author_sort Li, Shu-Shen
collection PubMed
description The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. The Rashba effect near the interface between GaAs and GaAlAs is assumed to be a linear relation with the distance from the quantum well side. We find that the splitting energy of the excited state is larger and less dependent on the position of the impurity than that of the ground state. Our results are useful for the application of Rashba spin-orbit coupling to photoelectric devices.
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spelling pubmed-28938552010-06-30 Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells Li, Shu-Shen Xia, Jian-Bai Nanoscale Res Lett Nano Express The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. The Rashba effect near the interface between GaAs and GaAlAs is assumed to be a linear relation with the distance from the quantum well side. We find that the splitting energy of the excited state is larger and less dependent on the position of the impurity than that of the ground state. Our results are useful for the application of Rashba spin-orbit coupling to photoelectric devices. Springer 2008-12-04 /pmc/articles/PMC2893855/ /pubmed/20596489 http://dx.doi.org/10.1007/s11671-008-9222-5 Text en Copyright ©2008 to the authors
spellingShingle Nano Express
Li, Shu-Shen
Xia, Jian-Bai
Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells
title Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells
title_full Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells
title_fullStr Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells
title_full_unstemmed Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells
title_short Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells
title_sort linear rashba model of a hydrogenic donor impurity in gaas/gaalas quantum wells
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893855/
https://www.ncbi.nlm.nih.gov/pubmed/20596489
http://dx.doi.org/10.1007/s11671-008-9222-5
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