Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores

GaAs was radially deposited on InAs nanowires by metal–organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanow...

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Detalles Bibliográficos
Autores principales: Paladugu, M, Zou, J, Guo, YN, Zhang, X, Joyce, HJ, Gao, Q, Tan, HH, Jagadish, C, Kim, Y
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893864/
https://www.ncbi.nlm.nih.gov/pubmed/20596432
http://dx.doi.org/10.1007/s11671-009-9326-6
Descripción
Sumario:GaAs was radially deposited on InAs nanowires by metal–organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given.

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