Cargando…
Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire
We report observation of catalyst-free hydride vapor phase epitaxy growth of InN nanorods. Characterization of the nanorods with transmission electron microscopy, and X-ray diffraction show that the nanorods are stoichiometric 2H–InN single crystals growing in the [0001] orientation. The InN rods ar...
Autores principales: | Shalish, I, Seryogin, G, Yi, W, Zimmler, MA, Likovich, E, Bell, DC, Capasso, F, Narayanamurti, V |
---|---|
Formato: | Texto |
Lenguaje: | English |
Publicado: |
Springer
2009
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893868/ https://www.ncbi.nlm.nih.gov/pubmed/20596436 http://dx.doi.org/10.1007/s11671-009-9276-z |
Ejemplares similares
-
Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE
por: Chen, Wei-Chun, et al.
Publicado: (2012) -
The InN epitaxy via controlling In bilayer
por: Zhou, Jin, et al.
Publicado: (2014) -
Transport and infrared photoresponse properties of InN nanorods/Si heterojunction
por: Kumar, Mahesh, et al.
Publicado: (2011) -
Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates
por: Li, Huijie, et al.
Publicado: (2016) -
Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique
por: Chen, Hugo Juin-Yu, et al.
Publicado: (2016)