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Oxygen Absorption in Free-Standing Porous Silicon: A Structural, Optical and Kinetic Analysis
Porous silicon (PSi) is a nanostructured material possessing a huge surface area per unit volume. In consequence, the adsorption and diffusion of oxygen in PSi are particularly important phenomena and frequently cause significant changes in its properties. In this paper, we study the thermal oxidati...
| Autores principales: | , , |
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| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2010
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893869/ https://www.ncbi.nlm.nih.gov/pubmed/20672128 http://dx.doi.org/10.1007/s11671-010-9532-2 |