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Study on Resistance Switching Properties of Na(0.5)Bi(0.5)TiO(3)Thin Films Using Impedance Spectroscopy
The Na(0.5)Bi(0.5)TiO(3)(NBT) thin films sandwiched between Au electrodes and fluorine-doped tin oxide (FTO) conducting glass were deposited using a sol–gel method. Based on electrochemical workstation measurements, reproducible resistance switching characteristics and negative differential resistan...
Autores principales: | , , , |
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Formato: | Texto |
Lenguaje: | English |
Publicado: |
Springer
2009
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893894/ https://www.ncbi.nlm.nih.gov/pubmed/20628453 http://dx.doi.org/10.1007/s11671-009-9397-4 |
Sumario: | The Na(0.5)Bi(0.5)TiO(3)(NBT) thin films sandwiched between Au electrodes and fluorine-doped tin oxide (FTO) conducting glass were deposited using a sol–gel method. Based on electrochemical workstation measurements, reproducible resistance switching characteristics and negative differential resistances were obtained at room temperature. A local impedance spectroscopy measurement of Au/NBT was performed to reveal the interface-related electrical characteristics. The DC-bias-dependent impedance spectra suggested the occurrence of charge and mass transfer at the interface of the Au/NBT/FTO device. It was proposed that the first and the second ionization of oxygen vacancies are responsible for the conduction in the low- and high-resistance states, respectively. The experimental results showed high potential for nonvolatile memory applications in NBT thin films. |
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