InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

The morphological and optical properties of In(0.2)Ga(0.8)As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In(0.2)Ga(0.8)As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substra...

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Autores principales: Li, Zhenhua, Wu, Jiang, Wang, Zhiming M, Fan, Dongsheng, Guo, Aqiang, Li, Shibing, Yu, Shui-Qing, Manasreh, Omar, Salamo, Gregory J
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893973/
https://www.ncbi.nlm.nih.gov/pubmed/20672090
http://dx.doi.org/10.1007/s11671-010-9605-2
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author Li, Zhenhua
Wu, Jiang
Wang, Zhiming M
Fan, Dongsheng
Guo, Aqiang
Li, Shibing
Yu, Shui-Qing
Manasreh, Omar
Salamo, Gregory J
author_facet Li, Zhenhua
Wu, Jiang
Wang, Zhiming M
Fan, Dongsheng
Guo, Aqiang
Li, Shibing
Yu, Shui-Qing
Manasreh, Omar
Salamo, Gregory J
author_sort Li, Zhenhua
collection PubMed
description The morphological and optical properties of In(0.2)Ga(0.8)As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In(0.2)Ga(0.8)As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substrates. A broad photoluminescence emission peak (~950 nm) with a full width at half maximum (FWHM) of 48 nm is obtained from the sample grown on (210) substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100) substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311) with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.
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spelling pubmed-28939732010-07-28 InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications Li, Zhenhua Wu, Jiang Wang, Zhiming M Fan, Dongsheng Guo, Aqiang Li, Shibing Yu, Shui-Qing Manasreh, Omar Salamo, Gregory J Nanoscale Res Lett Nano Express The morphological and optical properties of In(0.2)Ga(0.8)As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In(0.2)Ga(0.8)As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substrates. A broad photoluminescence emission peak (~950 nm) with a full width at half maximum (FWHM) of 48 nm is obtained from the sample grown on (210) substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100) substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311) with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications. Springer 2010-04-22 /pmc/articles/PMC2893973/ /pubmed/20672090 http://dx.doi.org/10.1007/s11671-010-9605-2 Text en Copyright © 2010 The Author(s) https://creativecommons.org/licenses/by-nc/4.0/ This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
spellingShingle Nano Express
Li, Zhenhua
Wu, Jiang
Wang, Zhiming M
Fan, Dongsheng
Guo, Aqiang
Li, Shibing
Yu, Shui-Qing
Manasreh, Omar
Salamo, Gregory J
InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
title InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
title_full InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
title_fullStr InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
title_full_unstemmed InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
title_short InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
title_sort ingaas quantum well grown on high-index surfaces for superluminescent diode applications
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893973/
https://www.ncbi.nlm.nih.gov/pubmed/20672090
http://dx.doi.org/10.1007/s11671-010-9605-2
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