InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

The morphological and optical properties of In(0.2)Ga(0.8)As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In(0.2)Ga(0.8)As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substra...

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Detalles Bibliográficos
Autores principales: Li, Zhenhua, Wu, Jiang, Wang, Zhiming M, Fan, Dongsheng, Guo, Aqiang, Li, Shibing, Yu, Shui-Qing, Manasreh, Omar, Salamo, Gregory J
Formato: Texto
Lenguaje:English
Publicado: Springer 2010
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893973/
https://www.ncbi.nlm.nih.gov/pubmed/20672090
http://dx.doi.org/10.1007/s11671-010-9605-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2893973/
https://www.ncbi.nlm.nih.gov/pubmed/20672090
http://dx.doi.org/10.1007/s11671-010-9605-2

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