Anodic Aluminum Oxide Membrane-Assisted Fabrication of β-In(2)S(3)Nanowires

In this study, β-In(2)S(3)nanowires were first synthesized by sulfurizing the pure Indium (In) nanowires in an AAO membrane. As FE-SEM results, β-In(2)S(3)nanowires are highly ordered, arranged tightly corresponding to the high porosity of the AAO membrane used. The diameter of the β-In(2)S(3)nanowires is about 60 nm with the length of about 6–8 μm. Moreover, the aspect ratio of β-In(2)S(3)nanowires is up to 117. An EDS analysis revealed the β-In(2)S(3)nanowires with an atomic ratio of nearly S/In = 1.5. X-ray diffraction and corresponding selected area electron diffraction patterns demonstrated that the β-In(2)S(3)nanowire is tetragonal polycrystalline. The direct band gap energy (E(g)) is 2.40 eV from the optical measurement, and it is reasonable with literature.