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Synthesis of Tin Nitride Sn(x)N(y)Nanowires by Chemical Vapour Deposition
Tin nitride (Sn(x)N(y)) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH(4)Cl at 450 °C under a steady flow of NH(3). The Sn(x)N(y)nanowires have an average diameter of 200 nm and lengths ≥5 μm and were...
| Autores principales: | , |
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| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2009
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894173/ https://www.ncbi.nlm.nih.gov/pubmed/20596341 http://dx.doi.org/10.1007/s11671-009-9364-0 |