Hierarchical Cd(4)SiS(6)/SiO(2) Heterostructure Nanowire Arrays

Novel hierarchical Cd(4)SiS(6)/SiO(2) based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Stu...

Descripción completa

Detalles Bibliográficos
Autores principales: Liu, Jian, Wang, Chunrui, Xie, Qingqing, Cai, Junsheng, Zhang, Jing
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894199/
https://www.ncbi.nlm.nih.gov/pubmed/20652094
http://dx.doi.org/10.1007/s11671-009-9470-z
Descripción
Sumario:Novel hierarchical Cd(4)SiS(6)/SiO(2) based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Studies reveal that a typical hierarchical Cd(4)SiS(6)/SiO(2) heterostructure nanowire is composed of a single crystalline Cd(4)SiS(6) nanowire core sheathed with amorphous SiO(2) sheath. Furthermore, secondary nanostructures of SiO(2) nanowires are highly dense grown on the primary Cd(4)SiS(6) core-SiO(2) sheath nanowires and formed hierarchical Cd(4)SiS(6)/SiO(2) based heterostructure nanowire arrays which stand vertically on silicon substrates. The possible growth mechanism of hierarchical Cd(4)SiS(6)/SiO(2) heterostructure nanowire arrays is proposed. The optical properties of hierarchical Cd(4)SiS(6)/SiO(2) heterostructure nanowire arrays are investigated using Raman and Photoluminescence spectroscopy.

Ejemplares similares