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The Effect of Interface Texture on Exchange Biasing in Ni(80)Fe(20)/Ir(20)Mn(80)System

Exchange-biasing phenomenon can induce an evident unidirectional hysteresis loop shift by spin coupling effect in the ferromagnetic (FM)/antiferromagnetic (AFM) interface which can be applied in magnetoresistance random access memory (MRAM) and recording-head applications. However, magnetic properti...

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Detalles Bibliográficos
Autor principal: Chen, Yuan-Tsung
Formato: Texto
Lenguaje:English
Publicado: Springer 2008
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894229/
https://www.ncbi.nlm.nih.gov/pubmed/20596365
http://dx.doi.org/10.1007/s11671-008-9207-4
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author Chen, Yuan-Tsung
author_facet Chen, Yuan-Tsung
author_sort Chen, Yuan-Tsung
collection PubMed
description Exchange-biasing phenomenon can induce an evident unidirectional hysteresis loop shift by spin coupling effect in the ferromagnetic (FM)/antiferromagnetic (AFM) interface which can be applied in magnetoresistance random access memory (MRAM) and recording-head applications. However, magnetic properties are the most important to AFM texturing. In this work, top-configuration exchange-biasing NiFe/IrMn(x Å) systems have been investigated with three different conditions. From the high-resolution cross-sectional transmission electron microscopy (HR X-TEM) and X-ray diffraction results, we conclude that the IrMn (111) texture plays an important role in exchange-biasing field (H(ex)) and interfacial exchange energy (J(k)).H(ex)andJ(k)tend to saturate when the IrMn thickness increases. Moreover, the coercivity (H(c)) dependence on IrMn thickness is explained based on the coupling or decoupling effect between the spins of the NiFe and IrMn layers near the NiFe/IrMn interface. In this work, the optimal values forH(ex)andJ(k)are 115 Oe and 0.062 erg/cm(2), respectively.
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spelling pubmed-28942292010-06-30 The Effect of Interface Texture on Exchange Biasing in Ni(80)Fe(20)/Ir(20)Mn(80)System Chen, Yuan-Tsung Nanoscale Res Lett Nano Express Exchange-biasing phenomenon can induce an evident unidirectional hysteresis loop shift by spin coupling effect in the ferromagnetic (FM)/antiferromagnetic (AFM) interface which can be applied in magnetoresistance random access memory (MRAM) and recording-head applications. However, magnetic properties are the most important to AFM texturing. In this work, top-configuration exchange-biasing NiFe/IrMn(x Å) systems have been investigated with three different conditions. From the high-resolution cross-sectional transmission electron microscopy (HR X-TEM) and X-ray diffraction results, we conclude that the IrMn (111) texture plays an important role in exchange-biasing field (H(ex)) and interfacial exchange energy (J(k)).H(ex)andJ(k)tend to saturate when the IrMn thickness increases. Moreover, the coercivity (H(c)) dependence on IrMn thickness is explained based on the coupling or decoupling effect between the spins of the NiFe and IrMn layers near the NiFe/IrMn interface. In this work, the optimal values forH(ex)andJ(k)are 115 Oe and 0.062 erg/cm(2), respectively. Springer 2008-11-25 /pmc/articles/PMC2894229/ /pubmed/20596365 http://dx.doi.org/10.1007/s11671-008-9207-4 Text en Copyright ©2008 to the authors
spellingShingle Nano Express
Chen, Yuan-Tsung
The Effect of Interface Texture on Exchange Biasing in Ni(80)Fe(20)/Ir(20)Mn(80)System
title The Effect of Interface Texture on Exchange Biasing in Ni(80)Fe(20)/Ir(20)Mn(80)System
title_full The Effect of Interface Texture on Exchange Biasing in Ni(80)Fe(20)/Ir(20)Mn(80)System
title_fullStr The Effect of Interface Texture on Exchange Biasing in Ni(80)Fe(20)/Ir(20)Mn(80)System
title_full_unstemmed The Effect of Interface Texture on Exchange Biasing in Ni(80)Fe(20)/Ir(20)Mn(80)System
title_short The Effect of Interface Texture on Exchange Biasing in Ni(80)Fe(20)/Ir(20)Mn(80)System
title_sort effect of interface texture on exchange biasing in ni(80)fe(20)/ir(20)mn(80)system
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894229/
https://www.ncbi.nlm.nih.gov/pubmed/20596365
http://dx.doi.org/10.1007/s11671-008-9207-4
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