Synthesis and Characterization of Tin Disulfide (SnS(2)) Nanowires

The ordered tin disulfide (SnS(2)) nanowire arrays were first fabricated by sulfurizing the Sn nanowires, which are embedded in the nanochannels of anodic aluminum oxide (AAO) template. SnS(2)nanowire arrays are highly ordered and highly dense. X-ray diffraction (XRD) and corresponding selected area...

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Detalles Bibliográficos
Autores principales: Lin, Ya-Ting, Shi, Jen-Bin, Chen, Yu-Cheng, Chen, Chih-Jung, Wu, Po-Feng
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894233/
https://www.ncbi.nlm.nih.gov/pubmed/20596366
http://dx.doi.org/10.1007/s11671-009-9299-5
Descripción
Sumario:The ordered tin disulfide (SnS(2)) nanowire arrays were first fabricated by sulfurizing the Sn nanowires, which are embedded in the nanochannels of anodic aluminum oxide (AAO) template. SnS(2)nanowire arrays are highly ordered and highly dense. X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrate the SnS(2)nanowire is hexagonal polycrystalline. The study of UV/Visible/NIR absorption shows the SnS(2)nanowire is a wide-band semiconductor with three band gap energies (3.3, 4.4, and 5.8 eV).

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