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Intense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films
Samarium (Sm) doped aluminum nitride (AlN) thin films are deposited on silicon (100) substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100–200 watts RF power and 5–8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffraction results show that films...
| Autores principales: | , |
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| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2009
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894235/ https://www.ncbi.nlm.nih.gov/pubmed/20596367 http://dx.doi.org/10.1007/s11671-009-9309-7 |