Magnetoresistance in Sn-Doped In(2)O(3)Nanowires

In this work, we present transport measurements of individual Sn-doped In(2)O(3)nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in...

Descripción completa

Detalles Bibliográficos
Autores principales: Berengue, Olívia M, Lanfredi, AlexandreJC, Pozzi, Livia P, Rey, JoséFQ, Leite, Edson R, Chiquito, Adenilson J
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894338/
https://www.ncbi.nlm.nih.gov/pubmed/20596280
http://dx.doi.org/10.1007/s11671-009-9336-4
Descripción
Sumario:In this work, we present transport measurements of individual Sn-doped In(2)O(3)nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.

Ejemplares similares