Magnetoresistance in Sn-Doped In(2)O(3)Nanowires

In this work, we present transport measurements of individual Sn-doped In(2)O(3)nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in...

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Detalles Bibliográficos
Autores principales: Berengue, Olívia M, Lanfredi, AlexandreJC, Pozzi, Livia P, Rey, JoséFQ, Leite, Edson R, Chiquito, Adenilson J
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894338/
https://www.ncbi.nlm.nih.gov/pubmed/20596280
http://dx.doi.org/10.1007/s11671-009-9336-4
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author Berengue, Olívia M
Lanfredi, AlexandreJC
Pozzi, Livia P
Rey, JoséFQ
Leite, Edson R
Chiquito, Adenilson J
author_facet Berengue, Olívia M
Lanfredi, AlexandreJC
Pozzi, Livia P
Rey, JoséFQ
Leite, Edson R
Chiquito, Adenilson J
author_sort Berengue, Olívia M
collection PubMed
description In this work, we present transport measurements of individual Sn-doped In(2)O(3)nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.
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spelling pubmed-28943382010-06-30 Magnetoresistance in Sn-Doped In(2)O(3)Nanowires Berengue, Olívia M Lanfredi, AlexandreJC Pozzi, Livia P Rey, JoséFQ Leite, Edson R Chiquito, Adenilson J Nanoscale Res Lett Nano Express In this work, we present transport measurements of individual Sn-doped In(2)O(3)nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures. Springer 2009-07-04 /pmc/articles/PMC2894338/ /pubmed/20596280 http://dx.doi.org/10.1007/s11671-009-9336-4 Text en Copyright ©2009 to the authors
spellingShingle Nano Express
Berengue, Olívia M
Lanfredi, AlexandreJC
Pozzi, Livia P
Rey, JoséFQ
Leite, Edson R
Chiquito, Adenilson J
Magnetoresistance in Sn-Doped In(2)O(3)Nanowires
title Magnetoresistance in Sn-Doped In(2)O(3)Nanowires
title_full Magnetoresistance in Sn-Doped In(2)O(3)Nanowires
title_fullStr Magnetoresistance in Sn-Doped In(2)O(3)Nanowires
title_full_unstemmed Magnetoresistance in Sn-Doped In(2)O(3)Nanowires
title_short Magnetoresistance in Sn-Doped In(2)O(3)Nanowires
title_sort magnetoresistance in sn-doped in(2)o(3)nanowires
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894338/
https://www.ncbi.nlm.nih.gov/pubmed/20596280
http://dx.doi.org/10.1007/s11671-009-9336-4
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