Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion...

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Detalles Bibliográficos
Autores principales: Cirlin, GE, Bouravleuv, AD, Soshnikov, IP, Samsonenko, Yu B, Dubrovskii, VG, Arakcheeva, EM, Tanklevskaya, EM, Werner, P
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894346/
https://www.ncbi.nlm.nih.gov/pubmed/20672038
http://dx.doi.org/10.1007/s11671-009-9488-2
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author Cirlin, GE
Bouravleuv, AD
Soshnikov, IP
Samsonenko, Yu B
Dubrovskii, VG
Arakcheeva, EM
Tanklevskaya, EM
Werner, P
author_facet Cirlin, GE
Bouravleuv, AD
Soshnikov, IP
Samsonenko, Yu B
Dubrovskii, VG
Arakcheeva, EM
Tanklevskaya, EM
Werner, P
author_sort Cirlin, GE
collection PubMed
description We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained.
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spelling pubmed-28943462010-07-28 Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate Cirlin, GE Bouravleuv, AD Soshnikov, IP Samsonenko, Yu B Dubrovskii, VG Arakcheeva, EM Tanklevskaya, EM Werner, P Nanoscale Res Lett Nano Express We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. Springer 2009-11-14 /pmc/articles/PMC2894346/ /pubmed/20672038 http://dx.doi.org/10.1007/s11671-009-9488-2 Text en Copyright ©2009 to the authors
spellingShingle Nano Express
Cirlin, GE
Bouravleuv, AD
Soshnikov, IP
Samsonenko, Yu B
Dubrovskii, VG
Arakcheeva, EM
Tanklevskaya, EM
Werner, P
Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate
title Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate
title_full Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate
title_fullStr Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate
title_full_unstemmed Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate
title_short Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate
title_sort photovoltaic properties of p-doped gaas nanowire arrays grown on n-type gaas(111)b substrate
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894346/
https://www.ncbi.nlm.nih.gov/pubmed/20672038
http://dx.doi.org/10.1007/s11671-009-9488-2
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