Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes

Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with...

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Detalles Bibliográficos
Autores principales: Heyn, Ch, Stemmann, A, Köppen, T, Strelow, Ch, Kipp, T, Grave, M, Mendach, S, Hansen, W
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894351/
https://www.ncbi.nlm.nih.gov/pubmed/20672041
http://dx.doi.org/10.1007/s11671-009-9507-3
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author Heyn, Ch
Stemmann, A
Köppen, T
Strelow, Ch
Kipp, T
Grave, M
Mendach, S
Hansen, W
author_facet Heyn, Ch
Stemmann, A
Köppen, T
Strelow, Ch
Kipp, T
Grave, M
Mendach, S
Hansen, W
author_sort Heyn, Ch
collection PubMed
description Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL) lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.
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spelling pubmed-28943512010-07-28 Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes Heyn, Ch Stemmann, A Köppen, T Strelow, Ch Kipp, T Grave, M Mendach, S Hansen, W Nanoscale Res Lett Nano Express Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL) lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines. Springer 2009-12-25 /pmc/articles/PMC2894351/ /pubmed/20672041 http://dx.doi.org/10.1007/s11671-009-9507-3 Text en Copyright © 2009 The Author(s) https://creativecommons.org/licenses/by-nc/4.0/ This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
spellingShingle Nano Express
Heyn, Ch
Stemmann, A
Köppen, T
Strelow, Ch
Kipp, T
Grave, M
Mendach, S
Hansen, W
Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes
title Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes
title_full Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes
title_fullStr Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes
title_full_unstemmed Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes
title_short Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes
title_sort optical properties of gaas quantum dots fabricated by filling of self-assembled nanoholes
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894351/
https://www.ncbi.nlm.nih.gov/pubmed/20672041
http://dx.doi.org/10.1007/s11671-009-9507-3
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