Considerable Enhancement of Field Emission of SnO(2)Nanowires by Post-Annealing Process in Oxygen at High Temperature

The field emission properties of SnO(2)nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO(2)nanowires, the turn-on and threshold field were 4.03 and 5.4 V/μm, respectively. Considerable enhancement of field emission of SnO...

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Detalles Bibliográficos
Autores principales: Wang, JB, Li, K, Zhong, XL, Zhou, YC, Fang, XS, Tang, CC, Bando, Y
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894354/
https://www.ncbi.nlm.nih.gov/pubmed/20596286
http://dx.doi.org/10.1007/s11671-009-9367-x
Descripción
Sumario:The field emission properties of SnO(2)nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO(2)nanowires, the turn-on and threshold field were 4.03 and 5.4 V/μm, respectively. Considerable enhancement of field emission of SnO(2)nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO(2)nanowires were post-annealed at 1,000 °C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/μm, respectively, and the current density was increased to 6.58 from 0.3 mA/cm(2)at the same applied electric field of 5.0 V/μm.

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