Considerable Enhancement of Field Emission of SnO(2)Nanowires by Post-Annealing Process in Oxygen at High Temperature

The field emission properties of SnO(2)nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO(2)nanowires, the turn-on and threshold field were 4.03 and 5.4 V/μm, respectively. Considerable enhancement of field emission of SnO...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, JB, Li, K, Zhong, XL, Zhou, YC, Fang, XS, Tang, CC, Bando, Y
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894354/
https://www.ncbi.nlm.nih.gov/pubmed/20596286
http://dx.doi.org/10.1007/s11671-009-9367-x
_version_ 1782183182728167424
author Wang, JB
Li, K
Zhong, XL
Zhou, YC
Fang, XS
Tang, CC
Bando, Y
author_facet Wang, JB
Li, K
Zhong, XL
Zhou, YC
Fang, XS
Tang, CC
Bando, Y
author_sort Wang, JB
collection PubMed
description The field emission properties of SnO(2)nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO(2)nanowires, the turn-on and threshold field were 4.03 and 5.4 V/μm, respectively. Considerable enhancement of field emission of SnO(2)nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO(2)nanowires were post-annealed at 1,000 °C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/μm, respectively, and the current density was increased to 6.58 from 0.3 mA/cm(2)at the same applied electric field of 5.0 V/μm.
format Text
id pubmed-2894354
institution National Center for Biotechnology Information
language English
publishDate 2009
publisher Springer
record_format MEDLINE/PubMed
spelling pubmed-28943542010-06-30 Considerable Enhancement of Field Emission of SnO(2)Nanowires by Post-Annealing Process in Oxygen at High Temperature Wang, JB Li, K Zhong, XL Zhou, YC Fang, XS Tang, CC Bando, Y Nanoscale Res Lett Nano Express The field emission properties of SnO(2)nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO(2)nanowires, the turn-on and threshold field were 4.03 and 5.4 V/μm, respectively. Considerable enhancement of field emission of SnO(2)nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO(2)nanowires were post-annealed at 1,000 °C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/μm, respectively, and the current density was increased to 6.58 from 0.3 mA/cm(2)at the same applied electric field of 5.0 V/μm. Springer 2009-06-24 /pmc/articles/PMC2894354/ /pubmed/20596286 http://dx.doi.org/10.1007/s11671-009-9367-x Text en Copyright ©2009 to the authors
spellingShingle Nano Express
Wang, JB
Li, K
Zhong, XL
Zhou, YC
Fang, XS
Tang, CC
Bando, Y
Considerable Enhancement of Field Emission of SnO(2)Nanowires by Post-Annealing Process in Oxygen at High Temperature
title Considerable Enhancement of Field Emission of SnO(2)Nanowires by Post-Annealing Process in Oxygen at High Temperature
title_full Considerable Enhancement of Field Emission of SnO(2)Nanowires by Post-Annealing Process in Oxygen at High Temperature
title_fullStr Considerable Enhancement of Field Emission of SnO(2)Nanowires by Post-Annealing Process in Oxygen at High Temperature
title_full_unstemmed Considerable Enhancement of Field Emission of SnO(2)Nanowires by Post-Annealing Process in Oxygen at High Temperature
title_short Considerable Enhancement of Field Emission of SnO(2)Nanowires by Post-Annealing Process in Oxygen at High Temperature
title_sort considerable enhancement of field emission of sno(2)nanowires by post-annealing process in oxygen at high temperature
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894354/
https://www.ncbi.nlm.nih.gov/pubmed/20596286
http://dx.doi.org/10.1007/s11671-009-9367-x
work_keys_str_mv AT wangjb considerableenhancementoffieldemissionofsno2nanowiresbypostannealingprocessinoxygenathightemperature
AT lik considerableenhancementoffieldemissionofsno2nanowiresbypostannealingprocessinoxygenathightemperature
AT zhongxl considerableenhancementoffieldemissionofsno2nanowiresbypostannealingprocessinoxygenathightemperature
AT zhouyc considerableenhancementoffieldemissionofsno2nanowiresbypostannealingprocessinoxygenathightemperature
AT fangxs considerableenhancementoffieldemissionofsno2nanowiresbypostannealingprocessinoxygenathightemperature
AT tangcc considerableenhancementoffieldemissionofsno2nanowiresbypostannealingprocessinoxygenathightemperature
AT bandoy considerableenhancementoffieldemissionofsno2nanowiresbypostannealingprocessinoxygenathightemperature

Ejemplares similares