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Considerable Enhancement of Field Emission of SnO(2)Nanowires by Post-Annealing Process in Oxygen at High Temperature
The field emission properties of SnO(2)nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO(2)nanowires, the turn-on and threshold field were 4.03 and 5.4 V/μm, respectively. Considerable enhancement of field emission of SnO...
| Autores principales: | , , , , , , |
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| Formato: | Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2009
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894354/ https://www.ncbi.nlm.nih.gov/pubmed/20596286 http://dx.doi.org/10.1007/s11671-009-9367-x |