Synthesis of Novel Double-Layer Nanostructures of SiC–WO(x)by a Two Step Thermal Evaporation Process

A novel double-layer nanostructure of silicon carbide and tungsten oxide is synthesized by a two-step thermal evaporation process using NiO as the catalyst. First, SiC nanowires are grown on Si substrate and then high density W(18)O(49)nanorods are grown on these SiC nanowires to form a double-layer...

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Detalles Bibliográficos
Autores principales: Kim, Hyeyoung, Senthil, Karuppanan, Yong, Kijung
Formato: Texto
Lenguaje:English
Publicado: Springer 2009
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894364/
https://www.ncbi.nlm.nih.gov/pubmed/20596292
http://dx.doi.org/10.1007/s11671-009-9318-6
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author Kim, Hyeyoung
Senthil, Karuppanan
Yong, Kijung
author_facet Kim, Hyeyoung
Senthil, Karuppanan
Yong, Kijung
author_sort Kim, Hyeyoung
collection PubMed
description A novel double-layer nanostructure of silicon carbide and tungsten oxide is synthesized by a two-step thermal evaporation process using NiO as the catalyst. First, SiC nanowires are grown on Si substrate and then high density W(18)O(49)nanorods are grown on these SiC nanowires to form a double-layer nanostructure. XRD and TEM analysis revealed that the synthesized nanostructures are well crystalline. The growth of W(18)O(49)nanorods on SiC nanowires is explained on the basis of vapor–solid (VS) mechanism. The reasonably better turn-on field (5.4 V/μm) measured from the field emission measurements suggest that the synthesized nanostructures could be used as potential field emitters.
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spelling pubmed-28943642010-06-30 Synthesis of Novel Double-Layer Nanostructures of SiC–WO(x)by a Two Step Thermal Evaporation Process Kim, Hyeyoung Senthil, Karuppanan Yong, Kijung Nanoscale Res Lett Nano Express A novel double-layer nanostructure of silicon carbide and tungsten oxide is synthesized by a two-step thermal evaporation process using NiO as the catalyst. First, SiC nanowires are grown on Si substrate and then high density W(18)O(49)nanorods are grown on these SiC nanowires to form a double-layer nanostructure. XRD and TEM analysis revealed that the synthesized nanostructures are well crystalline. The growth of W(18)O(49)nanorods on SiC nanowires is explained on the basis of vapor–solid (VS) mechanism. The reasonably better turn-on field (5.4 V/μm) measured from the field emission measurements suggest that the synthesized nanostructures could be used as potential field emitters. Springer 2009-04-19 /pmc/articles/PMC2894364/ /pubmed/20596292 http://dx.doi.org/10.1007/s11671-009-9318-6 Text en Copyright ©2009 to the authors
spellingShingle Nano Express
Kim, Hyeyoung
Senthil, Karuppanan
Yong, Kijung
Synthesis of Novel Double-Layer Nanostructures of SiC–WO(x)by a Two Step Thermal Evaporation Process
title Synthesis of Novel Double-Layer Nanostructures of SiC–WO(x)by a Two Step Thermal Evaporation Process
title_full Synthesis of Novel Double-Layer Nanostructures of SiC–WO(x)by a Two Step Thermal Evaporation Process
title_fullStr Synthesis of Novel Double-Layer Nanostructures of SiC–WO(x)by a Two Step Thermal Evaporation Process
title_full_unstemmed Synthesis of Novel Double-Layer Nanostructures of SiC–WO(x)by a Two Step Thermal Evaporation Process
title_short Synthesis of Novel Double-Layer Nanostructures of SiC–WO(x)by a Two Step Thermal Evaporation Process
title_sort synthesis of novel double-layer nanostructures of sic–wo(x)by a two step thermal evaporation process
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2894364/
https://www.ncbi.nlm.nih.gov/pubmed/20596292
http://dx.doi.org/10.1007/s11671-009-9318-6
work_keys_str_mv AT kimhyeyoung synthesisofnoveldoublelayernanostructuresofsicwoxbyatwostepthermalevaporationprocess
AT senthilkaruppanan synthesisofnoveldoublelayernanostructuresofsicwoxbyatwostepthermalevaporationprocess
AT yongkijung synthesisofnoveldoublelayernanostructuresofsicwoxbyatwostepthermalevaporationprocess

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